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2N7002 2N7002-7-F MOSFET N-CHANNEL 60V 115mA Replacement chip

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2N7002 2N7002-7-F MOSFET N-CHANNEL 60V 115mA Replacement chip

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Model Number : 2N7002

Place of Origin : Guangdong, China

Brand Name : Original

Packaging Details : Standard carton

MOQ : 1

Price : Negotiable

Package Type : Surface Mount

Brand : MOSFET N-CH 60V 115MA SOT-23

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Package / Case : TO-236-3, SC-59, SOT-23-3

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 115mA (Ta)

Rds On (Max) @ Id, Vgs : 7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id : 2.5V @ 250uA

Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V

Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V

Vgs (Max) : ±20V

Stock : In Stock

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Upgrade your Hashboard with 2N7002 MOSFET

Energy-efficient SMD MOSFET for improved Hashboard Performance

Improve the performance of your Hashboard with the 2N7002 MOSFET, specially designed to enhance the functionality of 3.3V applications. With a low gate to source threshold voltage of 2.1V, this MOSFET is perfect for power management applications, enabling you to keep switching performance high and energy usage low. Its low on-state resistance ensures that it remains energy efficient while it is on.

Plus, its SMD version is incredibly convenient for small applications, with the potential to endure 200mA continuous current and 1A peaks with maximum voltage threshold. So why wait? Upgrade your Hashboard today and elevate your mining experience with the 2N7002 MOSFET!

Product Category

MOSFET

Technology

Si

Mounting Style

SMD/SMT

Package / Case

SOT-23-3

Transistor Polarity

N-Channel

Number of Channels

1 Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

115 mA

Rds On - Drain-Source Resistance

1.2 Ohms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Qg - Gate Charge

-

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

200 mW

Channel Mode

Enhancement

Configuration

Single

Height

1.2 mm

Length

2.9 mm

Product

MOSFET Small Signal

Series

2N7002

Transistor Type

1 N-Channel

Width

1.3 mm

Forward Transconductance - Min

0.08 S

Product Type

MOSFET

Part # Aliases

2N7002_NL

Unit Weight

0.000282 oz


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