High-Performance STB80PF55T4 P-Channel MOSFET for Power Applications
The STMicroelectronics STB80PF55T4 is a high-performance P-Channel MOSFET designed for power applications that require efficient switching and high current handling capabilities. With a breakdown voltage of 55V and a continuous drain current rating of 80A, this MOSFET delivers robust performance in demanding environments. The STB80PF55T4 features a low drain-source resistance (Rds On) of 16 mOhms, minimizing power losses and enhancing overall system efficiency. The single-channel configuration makes it suitable for various power switching applications.
55V, 80A, Low Rds On - Ideal for High-Power Systems
With a gate-source voltage range of -16V to +16V, this MOSFET provides flexibility in driving the device and allows for easy integration into existing circuit designs. The enhancement mode operation ensures reliable and controlled switching behavior. This MOSFET is based on silicon (Si) technology, known for its excellent performance and reliability. It comes in a surface mount TO-263-3 package, offering convenient installation and space-saving benefits. Operating over a wide temperature range, from -55°C to +175°C, the STB80PF55T4 is suitable for harsh environments and can withstand demanding operating conditions.
The STB80PF55T4 MOSFET is designed to handle high power dissipation, with a power dissipation rating of 300W. This allows it to handle significant power loads without compromising performance. With a rise time of 190ns and fall time of 80ns, this MOSFET ensures fast and efficient switching characteristics, contributing to improved system performance. Measuring 10.4mm in length and 4.6mm in height, the STB80PF55T4 offers a compact form factor, enabling space-efficient designs. Whether you are working on power supplies, motor control, or other high-power applications, the STMicroelectronics STB80PF55T4 P-Channel MOSFET provides high power handling, low resistance, and efficient switching for your design needs.
Technical Features
| Feature |
Specification |
| Manufacturer |
STMicroelectronics |
| Product Category |
MOSFET |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
TO-263-3 |
| Transistor Polarity |
P-Channel |
| Number of Channels |
1 Channel |
| Vds - Drain-Source Breakdown Voltage |
55 V |
| Id - Continuous Drain Current |
80 A |
| Rds On - Drain-Source Resistance |
16 mOhms |
| Vgs - Gate-Source Voltage |
-16 V, +16 V |
| Minimum Operating Temperature |
-55°C |
| Maximum Operating Temperature |
+175°C |
| Pd - Power Dissipation |
300 W |
| Channel Mode |
Enhancement |
| Series |
STB80PF55T4 |
| Packaging |
Reel, Cut Tape, MouseReel |
| Configuration |
Single |
| Fall Time |
80 ns |
| Forward Transconductance - Min |
32 S |
| Height |
4.6 mm |
| Length |
10.4 mm |
| Rise Time |
190 ns |
Product Tags:
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STB80PF55T4 Transistor IC Chip P Channel MOSFET High Power and Efficiency Images
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